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. 2016 Sep 2;2(9):e1601240. doi: 10.1126/sciadv.1601240

Fig. 5. Benchmarking CNT array FET performance against Si MOSFETs.

Fig. 5

Isat of a champion CNT array FET (VDS = −1 V; Lch = 140 nm) and 90-nm node Si MOSFET (43) (VDS = −1.2 V) versus VGS − Voff, normalized by the dielectric constant of the gate dielectric (εrεo) and the gate oxide thickness (tox), where VGS − Voff is 0 V at an Ioff of 0.1 μA μm−1. Oxide parameters for the CNT array FET are tox = 15 nm and εr = (εair + εSiO2)/2 = 2.45 for the SiO2/CNT/air dielectric stack (31, 62). Oxide parameters for the Si MOSFET are tox = teff = 2.4 nm [effective oxide thickness accounting for inversion capacitance (63)] and εr = εSiO2 = 3.9. The champion CNT array FET exhibits an Isat that is 1.9-fold higher when measured at an equivalent charge density (VGS − Voff) εrεotox−1 of −0.85 μC cm−2.