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. 2016 Sep 9;6:32895. doi: 10.1038/srep32895

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Copyright © 2016, The Author(s)

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(a) Raman spectra acquired on GeTe samples of increasing thickness of 0.5, 1, 2, 4, 6, 8. 16 BLs grown on Si(111)-(√3 × √3)R30°-Sb. Measurements on a silicon reference and a thicker 60 nm GeTe film are shown as a comparison. (b) GeTe (A₁) and (E) mode strengthening with decreasing film thickness, calculated values for 4 BL and bulk are plotted with open symbols for comparison. (c) Raman spectrum acquired on 4 BL GeTe sample grown on Si(111)-(√3 × √3)R30°-Sb (line) compared with an analogous spectrum calculated by DFT at 0 K (dashed line). GeTe (A₁) and (E) modes are visible. (d) Displacement patterns for the two active Raman modes (E left, A₁ right) of the 4 BL supported on the bulk.