Table 2.
Specifications of the 1 Mpixel binary image sensor.
| Process | X-FAB, 0.18 µm, 6M1P (Non-Standard Implants) | |
|---|---|---|
| VDD | 1.3 V (Analog and Digital), 1.8 V (Array), 3 V (I/O pads) | |
| Pixel type | 3T-APS | |
| Pixel pitch | 3.6 µm | |
| Photo-detector | Partially pinned photodiode | |
| Conversion gain | 119 µV/e− | |
| Array | 1376 (H) × 768 (V) | |
| Column noise | 2 e− | |
| Field rate | 1000 fps | |
| ADC sampling rate | 768 KSa/s | |
| ADC resolution | 1 bit (VLSB = 1 mV) | |
| Output data rate | 32 (output pins) × 33 Mb/s = 1 Gb/s | |
| Package | PGA with 256 pins | |
| Power | Pixel array | 8.6 mW |
| ADCs | 2.6 mW | |
| Addressing | 3.8 mW | |
| I/O pads | 5 mW | |
| Total | 20 mW | |