Figure 1. Indirect detection of the ES spin resonance in the V_Si center of 4H-SiC.

(a) The GS and ES spin sublevels in the external magnetic field. The arrows labeled as ν₁, ν₂ and ν₅ indicate the RF driven transitions in the GS, detected in the experiment. (b–d) Magnetic field dependence of the V_Si ODMR spectra in the vicinity of the ESLAC-1, performed at different temperatures. The arrows indicate the magnetic field B_E1, at which the minimum ODMR contrast of the ν₁ transition is observed.