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. 2016 Sep 14;6:33408. doi: 10.1038/srep33408

Figure 7.

Figure 7

(a) The heating profile and shrinkage of SiC for a high temperature SPS process; (b) sample was sintered at 2100 °C using the SPS method. Note that there is neck formation between particles as well as grain growth. Despite the high temperature, densification is limited as can be seen by the presence of large pores.