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. Author manuscript; available in PMC: 2016 Sep 15.
Published in final edited form as: J Electrochem Soc. 2016;163(4):H3032–H3037. doi: 10.1149/2.0071604jes

Figure 1.

Figure 1

(A) Scheme of redox reactions at the tip and the conductive outer wall as defined in the cylindrical coordinate for simulation of SECM approach curves. (B) Approach curves simulated for a disk-shaped tip with a conductive and insulating outer wall (θ= 5° and RG = 1.4). The tip current was normalized against different iT,∞ values for a conductive and insulating outer wall (see eq 4).