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. 2016 Sep 16;6:32945. doi: 10.1038/srep32945

Table 2. Comparison of different area step size.

Quasi-random structure
C-Si slab
Area step size (nm) Writing time for 1 mm2 (min.) Short circuit current (mA/cm2) Short circuit current (mA/cm2)
14 9.5 19.0 6.1
28 9.0 18.1
56 8.5 17.5
80 7.5 17.4

(All patterns were written at a current of 4.86 nA and developed at 22 °C for 2 minutes).