Figure 2. Switching responses in Pt/BaM for out-of-plane magnetic fields.

(a,b) Effects of charge currents (I) in the Pt film on switching of the magnetization (M) in the BaM film under an out-of-plane field (H). The red spheres with arrows represent spin-polarized electrons deflecting toward the BaM layer. M represents the magnetization of BaM. τ represents the spin torque due to SHE. The direction of H is indicated in the insert. Note that the spin torque indicated in (a,b) is a damping-like torque (DLT). (c,d) Anomalous Hall resistance R_AHE of the Hall bar measured as a function of a magnetic field for different charge currents. The field was applied 20° away from the z axis, as shown in the insets of (a,b). In (c) Grey: I=0; Blue: I=−2 mA; Olive: I=−4 mA; and Red: I=−6 mA. In (d) Grey: I=0; Blue: I=2 mA; Olive: I=4 mA; and Red: I=6 mA. (e) Measured coercivity of the BaM film as a function of the charge current density. (f,g) Coercivity versus DLT field (H_DLT) estimated for three different field-like torque (FLT) fields (H_FLT) through macrospin and full micromagnetic simulations, respectively. Large blue spheres: H_FLT=0; small red spheres: H_FLT=H_DLT/2; and small olive spheres: H_FLT=H_DLT. The dash line in (e–g) is the H_c at I=0. All the measurements were done at room temperature.