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. 2015 Mar 17;16(2):025001. doi: 10.1088/1468-6996/16/2/025001

Figure 4.

Figure 4.

(a) SEM image of the sample after four repeated etching steps using resist and SiO2 interlayer as a mask. The etching depth is set to 100 nm for each step. (b) SPM image of the sample after six repeated etching steps using resist and SiO2 interlayer as a mask. The depth of 490 nm is obtained.