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. 2016 Sep 20;16(9):1531. doi: 10.3390/s16091531

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© 2016 by the authors; licensee MDPI, Basel, Switzerland.

This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).

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(a–e) Schematic illustration of the synthesis process of Mo-doped ZnO NW network gas sensors. Sensing transients of pure and Mo-doped ZnO NW network gas sensors to 5 ppm H₂S at 300, 325, and 350 °C: (f-1) ZnO NW sensor, 300 °C; (f-2) ZnO NW sensor, 325 °C; (f-3) ZnO NW sensor, 350 °C; (g-1) Mo-doped ZnO NW sensor, 300 °C; (g-2) Mo-doped ZnO NW sensor, 325 °C; and (g-3) Mo-doped ZnO NW sensor, 350 °C; (f-4,g-4) Recovery (%) = (R_air-recovery − R_gas-H2S)/(R_air-fresh − R_gas-H2S) × 100 (%) of pure and Mo-doped ZnO NW sensors at 300–400 °C (where, R_air-fresh: sensor resistance in air before exposure to H₂S, R_gas-H2S: sensor resistance in 5 ppm H₂S, and R_air-recovery: sensor resistance in air after 10 min exposure to air). Reproduced from [88] with permission. Copyright (2014) The Royal Society of Chemistry.