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. 2016 Sep 29;7:12611. doi: 10.1038/ncomms12611

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Copyright © 2016, The Author(s)

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(a–c) Memristor electrical biasing scheme used to test STDP. V_th+, V_th−: memristor switching thresholds. Data for individual device thresholds in Supplementary Table 2. Voltage levels used to induce LTP and LTD in Supplementary Table 3. Red shading: supra-threshold portions of the input affecting the memristor resistive state. (d) Typical experimental results from TiO₂ device. Black trace: raw data; blue trace: 10-point moving average; red trace: exponential fitting. Red shading: LTP. Blue shading: LTD. No shading: neutral region, no plasticity triggered. (e) Experimental data and exponential fittings describing STDP magnitude (relative change in device conductance ) as a function of initial memristor conductance. Red line: LTP fitting. Blue line: LTD fitting. Black dashed line: zero conductance change level. Same data as in d.