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. 2016 Oct 11;11:454. doi: 10.1186/s11671-016-1665-5

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© The Author(s). 2016

Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Fig. 6 — TRIM simulation plots for sputtering yield for the different density of Ag film: a bulk density, b an arbitrary low density value. c Energy relaxation of Ar ions in Ag thin films/Si substrate (in 100 nm × 100 nm y-z plane), after bombardment of 5000 Ar ions (in x-axis)