TABLE I.

PDMS etch rate and selectivity as a function of RF power and RF bias power in the ICP system.

Sample	RF power (W)	RF bias power (W)	PDMS etch rate (μm/h)	Selectivity (PDMS/PR etch rate)
1	100	200	…	…
2	300	200	39.6	1.4
3	400	200	42.6	1.3
4	500	200	58.6	1.5
5	700	200	69.0	1.5
6	500	50	30.7	1.4
7	500	100	45.0	1.5
8	500	200	58.6	1.5
9	500	350	72.8	1.6