TABLE V.
Summary of RIE parameters in ICP and CCP systems for optimal PDMS etching.
| Plasma System | RF power (W) | Total pressure (mTorr) | Gas composition | Etch rate (nm/min) | Etch selectivity |
|---|---|---|---|---|---|
| CCP | 100 | 30 | 100% SF6 | 188 | 2.6 |
| ICP | 500 | 10 | 94% SF6 | 1,180 | 1.8 |
Official websites use .gov
A
.gov website belongs to an official
government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you've safely
connected to the .gov website. Share sensitive
information only on official, secure websites.