Figure 3.

a) Molecular structures of PIFTBT8 and PC₇₁BM, and a schematic device with the ZnO CIL. b) Current density‐voltage (J−V) characteristics under AM 1.5G irradiation (100 mW cm⁻²), and c) Device stability of the inverted OSCs with ZnO CILs derived from controlled precursor solutions. Reproduced with permission.48 Copyright 2013, American Chemical Society. d) Average performance parameters of devices with ZnO CILs derived from ZnAc (red circles), deZn (blue triangles), PA‐modified ZnAc (green squares), and PA‐modified deZn (gray diamonds): V _OC, FF, J _SC, and PCE, all as a function of time exposed to the degradation solar simulator. Reproduced with permission.71 Copyright 2015, Royal Society of Chemistry.