Figure 1. Simulation domain of the double barrier memristive device, consisting of an Al₂O₃ tunnel barrier, a Nb_xO_y solid state electrolyte, and a Nb_xO_y/Au Schottky contact.

Positively charged (red circles) and negatively charged (blue circles) defects are located within the solid state electrolyte. Positively charged defects are assumed to be immobile, negatively charged defects are allowed to move within the solid state electrolyte (i), adsorb at the Au electrode (ii), and desorb from the Au electrode (iii).