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. 2016 Oct 20;11:468. doi: 10.1186/s11671-016-1689-x

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© The Author(s). 2016

Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.

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Fig. 6 — Resistances of 4.0-μm long SiNWs wired with FIB/GIS method compared with a 1.0-m long SiNW wired with the EBL method as a function of the temperature. The resistances are calculated by means of a linear fit in the voltage range of 4.8‒5.0 V. The small difference in resistance observable at higher temperature could be attributed to a discrepancy on the effective lengths. However, at lower temperature, this difference becomes bigger up to one order of magnitude. We believe this finding could be the sign of a greater Schottky barrier in the EBL wired SiNWs