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. Author manuscript; available in PMC: 2017 Oct 1.
Published in final edited form as: J Microelectromech Syst. 2016 Jul 29;25(5):963–967. doi: 10.1109/JMEMS.2016.2593339

Fig. 2.

Fig. 2

Profiles after a 2 min etch with the recipe of 1000 W ICP power, 10 W RF power, 8 mT pressure, 52 sccm SF6 and 8 sccm O2 flow rates. The mask materials are ZEP 520 (A), Cr (B), SiO2 (C) and Cr on nanoimprint resist (D).