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. Author manuscript; available in PMC: 2017 Oct 1.
Published in final edited form as: J Microelectromech Syst. 2016 Jul 29;25(5):963–967. doi: 10.1109/JMEMS.2016.2593339

Fig. 4.

Fig. 4

Etching characteristic widths in response to O2 flow rate for the Cr (inverted triangle), SiO2 (triangle) and Cr-on-polymer (square) masks. The blue, red and green curves represent undercut, minimum silicon width and the silicon width at half depth, respectively. The Cr masked sample did not survive 2 min etch with 6.5 sccm O2 flow rate. The minimum silicon width was taken as 0 and the other two widths are not available.