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. Author manuscript; available in PMC: 2017 Oct 1.
Published in final edited form as: J Microelectromech Syst. 2016 Jul 29;25(5):963–967. doi: 10.1109/JMEMS.2016.2593339

Fig. 6.

Fig. 6

Cross-section SEM images of the samples after 2 min etching, where a single etching parameter was changed from the recipe used in Fig. 2D in each image. The tuned parameters were: (A) 6 mT chamber pressure, (B) 15 mT chamber pressure, (C) 1500 W ICP power and (D) 30 W RF power.