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. 2011 May 27;12(3):034302. doi: 10.1088/1468-6996/12/3/034302

Table 2.

Formation energies (ΔEf) and thermodynamic transition levels measured from the CBM (ε ′ (q/q′ )=Eg− ε(q/q′ )) of the O vacancy and the Zn interstitial at the octahedral site. Formation energies are obtained at the O-poor limit when the Fermi level is located at the CBM, i.e. a strong n-type condition. Values for the ε ′ (2+/0) level are listed for the O vacancy because it shows a negative U behavior, i.e. instability of the + charge state. CB denotes a transition level within the conduction band. All values are in eV.

Method O vacancy Zn interstitial Reference
ΔEf ε ′ (2+/0) ΔEf ε ′ (2+/+) ε ′ (+/0)
Extrapolation using LDA and LDA+U 3.72 1.3 6.95 CB CB [92]
GGA with VBM correction using GGA+U 0.8 2.2 5.2 0.6 0.2 [39]
LSDA+Ud+Us 2.0 2.5 [93]
Hybrid (HSE06) 0.96a 0.67a [48]
Hybrid (HSE, a=0.375) 1.0 1.2 3.9 0.1 0.1 [44]
Hybrid (PBE0) 0.9 1.2 [44]
Hybrid (B3LYP) 1.13 0.09 0.16 [85]
Hybrid (B97-1), QM/MM 1.6b [105]
sX 0.85 1.21 3.7 0.1 <0.1 [46]
GW-HSE 1.68a [48]

aValues calculated for the zinc-blende structure.

bEstimated by the present authors, using the reported value for the formation energy with reference to the O2 molecule.