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. 2014 Jan 30;15(1):014603. doi: 10.1088/1468-6996/15/1/014603

Figure 17.

Figure 17.

(a) Integrated structure with a single-mode (λ = 3.2 μm) As2Se3 waveguide, Ge23Sb7S70 glass undercladding to prevent leakage of the mode into the Si substrate, a low index spacer to minimize modal mismatch and Fresnel reflection, and the photoconductive PbTe layer. (b) The cross-section view of the device. Reproduced with permission from [96].