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. 2010 Oct 27;11(5):054502. doi: 10.1088/1468-6996/11/5/054502

Figure 14.

Figure 14.

Transfer characteristics (Ids versus Vgs) of FETs based on (a) RGO, (b) B-HG and (c) N-HG. Here, Ids, Vds and Vgs stand for source to drain current, source to drain voltage and gate to source voltage, respectively. (Reproduced with permission from [60] © 2010 Elsevier B. V.)