Table 3.

Characteristics of FETs based on few-layer graphene sample.

Graphene	Threshold	Transconductance	Mobility	Subthreshold
FET device	Voltage	gm (S)	μ (cm2 Vs−1)	Swing (SS)
	Vth (V)			V/decade
SGO	−4.15	1.15× 10−7	0.3	10.9
	0.84	3.28×10−5	μe=87.9	5.45
RGO	−0.62 V	3.77×10−5	μh=101.3	5.15
EG	−0.17	1.56 × 10−7	0.4	2.1
EG-H	−1.72	3.88× 10−7	0.4	9.7
EG-MW	1.0	3.78× 10−6	4.3	4.5
DG	−1.49	3.09× 10−4	715	11.5
HG	−1.72	9.01× 10−3	10,428	3.0
B-HG	1.06	2.47× 10−4	572	2.9
N-HG	−3.1	1.93× 10−5	447	8.37