Table 2.

Voltage gating parameters for hVDAC-2 WT and its single tryptophan mutants.

hVDAC-2 mutantsa	Positive voltages			Negative voltages			Single channel conductance [nS]d
	n	V0b	nFV0c	n	V0b	nFV0c
WT (5)e	3.12 ± 0.50	28.63 ± 1.92	8.62	3.07 ± 0.47	−25.00 ± 2.64	7.4	2.43 ± 0.58 (6), 3.98 ± 0.50 (12)
W86,160,221F (4)	2.54 ± 0.55	19.97 ± 1.00	4.90	1.89 ± 0.33	−22.13 ± 2.90	4.04	2.44 ± 0.43 (5), 3.97 ± 0.63 (10)
W75,160,221F (4)	2.80 ± 0.71	24.85 ± 3.37	6.72	3.13 ± 0.31	−22.59 ± 2.93	6.82	2.48 ± 0.26 (6), 3.85 ± 0.39 (10)
W75,86,221F (4)	2.58 ± 0.20	23.64 ± 2.85	5.89	2.31 ± 0.20	−26.07 ± 1.86	5.80	2.82 ± 0.21 (6), 3.91 ± 0.37 (8)
W75,86,160F (4)	2.24 ± 0.61	25.63 ± 2.44	5.55	2.29 ± 0.25	−24.08 ± 3.22	5.33	2.46 ± 0.57 (5), 3.74 ± 0.47 (11)

Error values represent standard deviation between independent experiments.

^aValues in brackets indicate the number of independent experiments conducted for the voltage ramp studies to derive n and V₀ values.

^bV₀ given in mV.

^cnFV₀ given in kJ mol⁻¹.

^dNumbers in parenthesis indicate the total number of channels considered from at least three independent experiments. Channels are segregated based on their insertion in fully open (~ 4 nS) or in subconductance (~ 2 nS) states.

^eParameters for WT are published in reference [19] and are used here with permission for purpose of comparison.