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. 2015 Jun 4;16(3):035009. doi: 10.1088/1468-6996/16/3/035009

Figure 1.

Figure 1.

(a) The optical image of mechanically exfoliated ML MoS2 on Si/SiO2 substrate. (b) AFM image of ML MoS2. (c) Height profile measured along the green line in panel (b). (d) Optical image of fabricated device with source and drain electrodes of the transistors made of Cr/Au (6/80 nm).