Table 1.
Devices | Wavelength [nm] | Detectivity [Jones] | Pulsed light frequency [Hz] | Rise time [μs] | Fall time [μs] | References |
---|---|---|---|---|---|---|
Gr/MoSe2/Si heterojunction | 365–1310 | 7.13 × 1010 | 106 | 0.27 | 0.35 | This work |
Monolayer MoSe2 phototransistor | 532, 650 | _ | _ | 2.5 × 104 | 2.5 × 104 | 43 |
MoSe2 nanosheets photoconductor | 650 | _ | _ | 2.9 × 106 | 4.6 × 106 | 44 |
Monolayer MoSe2 photoconductor | 532 | _ | _ | 6 × 104 | 6 × 104 | 45 |
MoSe2 nanostructure photoconductor | 650 | _ | _ | 7.9 × 106 | 9.8 × 106 | 51 |
Multilayer MoSe2 phototransistor | 532 | _ | _ | 1.5 × 104 | 3 × 104 | 52 |
Multilayer MoS2 phototransistor | 532 | ≈1010 | _ | 70 | 110 | 53 |
Gr/Si heterojunction | 400‐900 | 2.1 × 108 | 20 | 1.2 × 103 | 3 × 103 | 54 |