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. 2016 Nov 10;6:36951. doi: 10.1038/srep36951

Figure 1.

Figure 1

Summary of the typical results for ncSi:H and ncSi-OD characterized by (a) XRD, (b) ATR-FTIR, and (c) HR-TEM. The HR-TEM image was obtained from ncSi:H. The inset is a typical photograph of 2.1-nm ncSi:H. The estimated full width at half maxima (FWHM) of the diffraction peaks of (111), (220), and (311) planes were 4.43 ± 0.025°, 4.99 ± 0.04° and 5.32 ± 0.06°, respectively, for ncSi:H and 4.35 ± 0.02°, 4.73 ± 0.03° and 5.20 ± 0.05°, respectively, for ncSi-OD.