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. 2016 Nov 10;6:36951. doi: 10.1038/srep36951

Figure 3.

Figure 3

PL decay profiles for (a) ncSi:H and (b) ncSi-OD, measured over the temperature range 3–298 K. Temperature dependence of the characteristic PL decay time: (c) longer component and (d) shorter component for ncSi:H and ncSi-OD, respectively.