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. 2016 Oct 5;16(11):6802–6807. doi: 10.1021/acs.nanolett.6b02494

Figure 1.

Figure 1

(a) Schematic view of the amorphous zone (dark gray) created in the crystalline Ge QD (gray) by low-energy implantation of a single Ge ion. (b) Partial recrystallization, solid phase epitaxial regrowth (SPER), and overgrowth of the GIB-QD with crystalline Si.