Figure 4. Temperature (T)-dependent resistivity (ρ) of H-Gr and the characteristics of H-Gr's FETs at 300 K.

(a) The behaviour of ρ−1/T of H-Gr (η=25%) reveals the prevailing transport mechanism as crystal semiconductors. (b) Schematics of H-Gr's FETs and its experimental setup. (c) I–V source-drain characteristics were initially nonlinear but became linear as the gate bias was increased from −40 to 20 V. (d) Change in current on the sweep of a back-gate voltage (inset: optical image of the devices; scale bar, 10 μm).