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. 2016 Nov 22;6:36578. doi: 10.1038/srep36578

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Copyright © 2016, The Author(s)

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(a) Resistivity of Ba_1−xK_xFZnAs for x = 0, 0.1, 0.2 samples. (b) ρ(T) of (Ba_0.925K_0.075)F(Zn_0.9Mn_0.1)As under various fields. Inset shows the enlarged ρ(T) curve for (Ba_0.925K_0.075)F(Zn_0.9Mn_0.1)As under various fields at low temperatures. (c) Hall effect measurements of (Ba_0.1K_0.1)F(Zn_0.9Mn_0.1)As specimen at T = 250 K. (d) Correlation between T_C and the hole concentration for various DMS systems. The blue stars represent the present work. (e) Negative magnetoresistance of (Ba_0.8K_0.2)F(Zn_0.95Mn_0.05)As at different temperatures, which can be defined as [ρ(H) − ρ(0)]/ρ(0).