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. 2016 Nov 28;6:37077. doi: 10.1038/srep37077

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Copyright © 2016, The Author(s)

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Panel (a) illustrates the change in current ΔI as a function of applied magnetic field and junction bias. The other two plots illustrate (b) the change in current ΔI at B = 0 mT and DC current I₀ and (c) sensitivity δB as a function of applied junction bias. Note that for this particular SiC device, a forward bias of 2.35 V yielded the optimum sensitivity of .

Inline graphic — Panel (a) illustrates the change in current ΔI as a function of applied magnetic field and junction bias. The other two plots illustrate (b) the change in current ΔI at B = 0 mT and DC current I₀ and (c) sensitivity δB as a function of applied junction bias. Note that for this particular SiC device, a forward bias of 2.35 V yielded the optimum sensitivity of .