Table 1. Description of parameters and applied values.

Parameter (Unit)	Value (range)	Description
c (F/m2)	1 ⋅ 10−2 [47, 48]	Specific membrane capacitance
ϱm (S/m2)	1/2.8 [47]	Specific membrane conductance
ϱi (S/m)	1/1.5 [47, 48]	Specific internal (axial) conductance
Ds (m)	{5, 10*, 15} ⋅ 10−6 [49]	Soma diameter
Dd (m)	{0.6, 1.2*, 1.8} ⋅ 10−6 [50]	Dendritic cable diameter
L (m)	{3.5, 7*, 10.5} ⋅ 10−4 [51]	Dendritic cable length
Cs(F)	$c{D}_s^2\pi$	Somatic membrane capacitance
Gs (S)	${\varrho }_m{D}_s^2\pi$	Somatic membrane conductance
cm (F/m)	cDd π	Dendritic membrane capacitance per unit length
gm (S/m)	ϱm Dd π	Dendritic membrane conductance per unit length
gi (S ⋅ m)	ϱi(Dd/2)2 π	Internal (axial) conductance per unit length
Vs (mV)	{10, 20}	Spike (or cutoff) voltage
Vr (mV)	0	Reset voltage of BS model
VT (mV)	10 [52]	Threshold voltage
V0 (mV)	Vr	Baseline voltage for EIF model extension
ΔT (mV)	1.5 [52]	Threshold slope factor
TRef (ms)	1.5	Duration of refractory period
CeP (F)	Cs	Membrane capacitance of eP model
GeP (S)	Gs	Membrane conductance of eP model
$V_r^{\prime }$ (mV)	5	Reset voltage of eP and P models
$I_s^0$ (pA)	[4.254, 11.407]	Mean input current at the soma
σs (pA)	[8.887, 74.512]	Somatic input noise intensity
$I_d^0$ (pA)	[6.255, 13.214]	Mean input current at the dendrite
σd (pA)	[21.875, 122.363]	Dendritic input noise intensity
τ (ms)	0.5	Synaptic current correlation time
E1 (V/m)	{1, 10}	Amplitude of electric field
φ (rad)	[0, 104] ⋅ 2π	Angular frequency of electric field
Δ (ms)	3	Spike coincidence precision

* indicates default values.