Figure 5. Analysis of Scanning Kelvin Probe microscopy data obtained on OTFT channel exposed to increasing strain.

(a) profiles of surface potential VSP(x) across the transistor channel; (b) profiles of local sheet resistance Rs. Curves taken at higher strain are offset by ΔVSP = 2 V and ΔRS = 150 G Ω. Gate and drain potential were kept at VG = −3 V and VD = −5 V.