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. 2016 Oct 29;468(11):1895–1907. doi: 10.1007/s00424-016-1895-5

Fig. 5.

Fig. 5

Neutralisation of single IS4 and IIS4 charges differently affects gating of pore mutants A780T and G1193T. a Averaged activation curves of WT; A780T and G1193T and constructs A780T/R267Q, G1193T/R267Q (IS4), A780T/R650Q, G1193T/R650Q (IIS4). Red arrows illustrate the rightward shift of the activation curves upon neutralisation of IS4 R267 (R267Q) and IIIS4 R267 (R267Q) charges. Note that neutralisation of single IS4 and IIIS4 charges caused significant reductions in slope of the activation curves (red curves, see also Table 1). b Slope factors of the activation curves of pore mutants (grey bars) are significantly increased by single charge neutralisation in IS4 (red bars) but not in IIS4 (blue bars). See also Table 1 and Figs. S2, S3, and S4 (Supplemental Materials) for other constructs. c, d Voltage-dependent time constants of channel activation/deactivation (c) and the slowest activation time constant at the peak of the bell-shaped curve (τ max) (d). Note that voltage-sensor neutralisations in IS4 (red) or IIS4 (blue) significantly accelerate the kinetics of ‘slowly’ gating pore mutants. (Colour figure online)