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. 2015 Jun 25;5:11477. doi: 10.1038/srep11477

Figure 4. Dynamic storage modulus (without considering elastic modulus hardening by decreasing temperature) at frequency ω = 0.125, 0.25, 0.5, 1.0, 2.0 Hz and ω = 0 Hz (i.e., static elastic modulus) at defect concentration.

Figure 4

(a) X = 0.09 and (b) X = 0.45. Inset describes the Vogel-Fulcher relation between frequency and Tg (i.e., the dip temperature). Dash lines describe the dip position at 0 Hz.