Figure 2.

a) The schematic illustration of the growth of SnSe₂ single crystals using the vapor transport deposition (VTD) technique. b) The optical image of SnSe₂ single crystals with the size of several millimeters. c) Optical image of SnSe₂ flake placed on the surface of a silicon wafer capped by 285 nm thick silicon dioxide. d) The thickness of monolayer SnSe₂. e) Normalized Raman spectra of SnSe₂ from monolayer to bulk. The intensity of Si peak is set as constant. (a–e) Reproduced with permission.120