Table 1.
GIVMCs | Crystal structures | Lattice parameters[Å] | Distance[nm] | Electronic properties | Bulk bandgaps[eV] | References |
---|---|---|---|---|---|---|
GeS | Orthorhombic | a = 4.3 | 0.56 | p‐type | ind./dir. 1.55–1.65 | 91, 92 |
b = 10.47 | ||||||
c = 3.64 | ||||||
GeS2 | Orthorhombic | a = 11.74 | – | p‐type | dir. 2.8–3.4 | 111, 260 |
b = 22.47 | ||||||
c = 6.88 | ||||||
GeSe | Orthorhombic | a = 10.84 | – | p‐type | ind./dir. 1.1–1.2 | 93, 94 |
b = 3.83 | ||||||
c = 4.39 | ||||||
GeSe2 | Monoclinic | a = 7.01 | – | p‐type | 2.8 | 113 |
b = 16.79 | ||||||
c = 11.83 | ||||||
SnS | Orthorhombic | a = 4.33 | 0.56 | p‐type | ind. 1.07 | 79 |
b = 11.19 | dir. 1.3 | |||||
c = 3.98 | ||||||
SnS2 | Hexagonal | a = b = 10.47 | 0.62 | n‐type | ind. 2.2 | 72 |
c = 5.89 | ||||||
SnSe | Orthorhombic | a = 11.49 | 0.57 | p‐type | ind. 0.9 | 105 |
b = 4.15 | dir. 1.3 | |||||
c = 4.44 | ||||||
SnSe2 | Hexagonal | a = b = 3.81 | 0.62 | n‐type | 1.0 | 120 |
c = 6.14 |