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. 2016 Nov 29;3(12):1600302. doi: 10.1002/advs.201600302

Figure 13.

Figure 13

a) Photoluminescence emission spectrum of Zn3Ga2GeO8: Cr3+ under an 800 nm laser diode excitation at RT. b) Plot of the integrated TL intensities as a function of the excitation power. The left and right insets are the proposed one‐photon and two‐photon trap filling mechanisms corresponding to low‐ and high‐excitation powers, respectively. Reproduced with permission.51 Copyright 2016, Optical Society of America.