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. 2016 Dec 13;7:13802. doi: 10.1038/ncomms13802

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Copyright © 2016, The Author(s)

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(a) Schematic of the device for spin pumping and spin-galvanic effect SGE. The [110]-orientated Fe/GaAs stripe is integrated between the signal (S) and ground (G) lines of the coplanar waveguide (CWG). (b) Magnetic-field μ₀H dependent voltage measured at 300 K for ϕ_M=135° and 315°. This is the ideal configuration for the study of SGE since the parasitic AMR of Fe is absent when H is perpendicular to the stripe. (c) Magnetization angle ϕ_M dependence of V_SGE, the solid line is a fit to cos(ϕ_M+45°). (d) Crystallographic orientation dependence of the magnitude of V_SGE. The error bar is the s.d. obtained by fitting the ϕ_M dependence of V_SGE for different stripe orientations.