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. 2016 Dec 12;7:13713. doi: 10.1038/ncomms13713

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Copyright © 2016, The Author(s)

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(a) STM topographic image on the b–c plane of undoped SnSe (p-type). The dotted ellipse indicates Sn vacancies. (b) High resolution STM image taken from one of the Sn vacancies which is marked with a box in a. (c) STM topographic image on the b–c plane of Bi-doped SnSe (n-type). The carrier concentration for undoped and Bi-doped SnSe is 5.2 × 10¹⁸ cm⁻³ at 773 K and—8.7 × 10¹⁸ cm⁻³ at 773 K, respectively. STM scanning condition: (a,b) sample bias (V_b)=−1.5 V, tunneling current (I_t)=30 pA, (c) V_b=−2.0 V, I_t=18 pA. The height scale (Δz) is given by the colour bar on the right of the STM images.