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. 2016 Dec 16;2(12):e1601742. doi: 10.1126/sciadv.1601742

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Copyright © 2016, The Authors

This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license, which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.

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Fig. 2 — (A) Zero-field temperature dependence of the resistivity in ZrSiS. The inset shows the extraordinarily low residual resistivity of 48(4) nΩ⋅cm for a crystal with an RRR of ≈300. (B) Temperature dependence (9 T) of the resistivity in ZrSiS at various angles. The θ value is taken as the angle between the applied field and the current, which is applied along the a axis. The inset shows the Hall resistance (H perpendicular to I) as a function of temperature at various magnetic fields. Dashed vertical lines show the magnetic field dependence of the maximum R_H. A p-n crossover is evident for the 3 and 4-T measurements at 30 and 39 K, respectively, before reaching a plateau at low temperatures.