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. Author manuscript; available in PMC: 2017 Nov 10.
Published in final edited form as: Nanoscale. 2016 Nov 10;8(44):18718–18725. doi: 10.1039/c6nr06235k

Fig. 3.

Fig. 3

(a) Nanochannel conductance as function of KCl concentration for various gate voltages (symbols) and the Geometry-Governed-Conductance (GGC) model (dashed line). (b–e) Illustration of ions rearrangement for both negative (b,c) and positive (d,e) gate potential at low (b,d) and high (c,e) ionic strength (LIS and HIS respectively). N represents the neutral region.