Fig. 3.
Measurements and modeling of T-dependent device characteristics. (A) Arrhenius plots of the T-dependent linear μ-values for DPP2T and DPP2T/PS FETs under various VDS values: −2 V (squares), −4 V (circles), −6 V (triangles), and −8 V (inverted triangles). (B) EA as a function of the channel F obtained in the high-T (>190 K) and low-T (<190 K) regimes for DPP2T and DPP2T/PS. (C) Semilogarithmic plots showing the linear variation in the linear μ as a function of F1/2 for DPP2T and DPP2T/PS FETs at T = 280 K.