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. 2016 Nov 22;113(50):14261–14266. doi: 10.1073/pnas.1606947113

Fig. 4.

Fig. 4.

Large-area FT-FET device. (A) A photograph and an illustration of the FET device structure of a large-area FT-FET device. In the magnified optical microscopy image, inkjet-printed PEDOT:PSS electrodes are shown. (Scale bar, 500 μm.) (B) Tr spectra of FT-FETs measured under different layering conditions. (C) Transfer characteristics of FT-FETs. The channel length and width are 100 μm and 1,000 μm, respectively. (D) Cycle stability test of FT-FETs with an alternating on/off gate-voltage (VGS) pulse (1 Hz) under a constant VDS of −30 V before and after 1,000 bending cycles at a bending radius of R ∼5 mm. (E) Transfer characteristics of the FT-FETs before and after 1,000 bending cycles and 2,000 electrical switching cycles (1 Hz) with alternating gate pulses of −60 V (on state) and 0 V (off state) under a VDS of −30 V.