Fig. 4.

Diagram of the relative number of photoelectrons with exposure time for 0.8 MHz (red line) temporally gated and ungated beam (black line) captured by the CMOS camera, and for 0.8 MHz temporally gated beam using an EMCCD(blue line). The exposure time can be reduced down to 7.58 ms (red broken line) with 0.8 MHz temporally gated beam for collecting the same number of photo-electrons (N_0.8MHz/N_ungated = 1, horizontal broken line) as that of the ungated beam at 50ms exposure. Using an EMCCD with temporal gating, the exposure time can be further reduced to ~0.28 ms (blue broken line).