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. 2016 Dec 22;6:39623. doi: 10.1038/srep39623

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Copyright © 2016, The Author(s)

This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/

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(a) Representative sketch of BAMS setup and EGOFET architecture along with the chemical structures of TIPS-pentacene, diF-TES-ADT and PS. I-V transfer characteristics of (b) TIPS:PS/PFBT, (c) TIPS:PS, (d) diF:PS/PFBT and (e) diF:PS. Electrical characteristics were recorded in saturation regime (V_DS = −0.4 V).