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. 2016 Dec 22;6:39623. doi: 10.1038/srep39623

Table 1. Field effect mobility (μ), threshold voltage (V th ), on/off ratio (I on /I off ), and subthreshold swing (SS) of our EGOFETs are extracted in saturation regime.

system MilliQ H2O
NaCl 1M
μ (cm2V−1s−1)* Vth (mV) Ion/Ioff SS(mV/dec) μ (cm2V−1s−1)* Vth (mV) Ion/Ioff SS (mV/dec)
TIPS:PS/PFBT 0.12 12 (±2) 7.3 × 103 87 (±3) 0.07 −166 (±5) 1.0 × 104 77 (±6)
TIPS:PS 0.05 −112 (±3) 6.1 × 103 80 (±2) 0.02 −194 (±5) 3.7 × 103 87 (±9)
TIPS/PFBT 0.002 −79 (±1) 1.1 × 102 184(±1) 0.001 −156 (±3) 1.8 × 102 100 (±5)
TIPS 0.001 −51 (±1) 8.3 × 101 211(±7) 0.001 −129 (±1) 4.1 × 101 208 (±7)
diF:PS/PFBT 0.18 49 (±1) 1.5 × 104 82 (±2) 0.08 −19 (±1) 9.7 × 103 86 (±7)
diF:PS 0.10 125 (±1) 4.3 × 103 87 (±7) 0.07 −152 (±4) 8.6 × 103 86 (±7)
diF/PFBT 0.04 −145 (±3) 1.2 × 103 97 (±5) 0.02 −200 (±4) 1.6 × 103 87 (±5)
diF 0.004 −28 (±4) 1.6 × 102 121(±1) 0.02 −120 (±2) 5.5 × 102 90 (±4)

*All these values are affected by an error ranging from 2% to 20%.