Figure 1.

Selected depth profiles of relative disorder in Si bombarded with a pulsed beam of 500 keV Ar ions with F_on = 1.9 × 10¹³ cm⁻² s⁻¹, t_on = 1 ms, and different t_off values given in legends at temperatures and doses of (a) 40 °C and 2.7 × 10¹⁴ cm⁻² and (b) 80 °C and 5.0 × 10¹⁴ cm⁻². For clarity, only every 10th experimental point is depicted. The inset in (a) is a schematic of the time dependence of the instantaneous dose rate for pulsed beam irradiation, defining t_on, t_off, and F_on.